HYB25D512800CE-6
  • image of Memory> HYB25D512800CE-6
HYB25D512800CE-6
CLASSIFICATION
Memory
manufacturer
Qimonda
type
IC DRAM 512MBIT PAR 66TSOP II
encapsulation
package
Tape & Reel (TR)
RoHS
YES
price
available options
price inquiry
inventory:1600
Not satisfied with the price? Please fill in the information and send the RFQ quickly below. We will respond immediately
Quick inquiry
Similar models
MB85RS64PNF-G-AMERE2
RAMXEED
IC DRAM 512MBIT PAR 66TSOP II
EM016LXQBB310ISCR
Everspin Technologies Inc.
IC DRAM 512MBIT PAR 66TSOP II
EM016LXQBDH10ISCR
Everspin Technologies Inc.
IC DRAM 512MBIT PAR 66TSOP II
EM008LXQBB310ISCR
Everspin Technologies Inc.
IC DRAM 512MBIT PAR 66TSOP II
EM004LXQBDH10ISCR
Everspin Technologies Inc.
IC DRAM 512MBIT PAR 66TSOP II
specifications
PDF(1)
Part Status
Discontinued at
Mounting Type
Surface Mount
Operating Temperature
0°C ~ 70°C (TA)
Programmable
Not Verified
Memory Type
Volatile
Memory Interface
Parallel
Write Cycle Time - Word, Page
-
Voltage - Supply
2.3V ~ 2.7V
Clock Frequency
166 MHz
Memory Size
512Mbit
Memory Organization
64M x 8
Memory Format
DRAM
Technology
SDRAM - DDR
Package / Case
66-TSSOP (0.400", 10.16mm Width)
Supplier Device Package
66-TSOP II